Module including metallized ceramic tubes for rf and gas delivery

ABSTRACT

A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and a backside gas tube made of metallized ceramic material that is located in an interior of the stem. The metallized ceramic tube can be used to deliver backside gas to the substrate and supply RF power to an embedded electrode in the pedestal.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 15/608,135, filed May 30, 2017, the entire contentof which is hereby incorporated by reference.

FIELD OF THE INVENTION

This invention pertains to semiconductor substrate processingapparatuses for processing semiconductor substrates, and may findparticular use in plasma-enhanced chemical vapor depositions processingapparatuses operable to deposit thin films.

BACKGROUND

Semiconductor substrate processing apparatuses are used to processsemiconductor substrates by techniques including etching, physical vapordeposition (PVD), chemical vapor deposition (CVD), plasma-enhancedchemical vapor deposition (PECVD), atomic layer deposition (ALD),plasma-enhanced atomic layer deposition (PEALD), pulsed deposition layer(PDL), plasma-enhanced pulsed deposition layer (PEPDL), and resistremoval. One type of semiconductor substrate processing apparatus is aplasma processing apparatus that includes a reaction chamber containingupper and lower electrodes wherein a radio frequency (RF) power isapplied between the electrodes to excite a process gas into plasma forprocessing semiconductor substrates in the reaction chamber.

SUMMARY

Disclosed herein is a semiconductor substrate processing apparatus forprocessing semiconductor substrates, comprising a vacuum chamberincluding a processing zone in which a semiconductor substrate may beprocessed; a process gas source in fluid communication with the vacuumchamber for supplying a process gas into the vacuum chamber; ashowerhead module through which process gas from the process gas sourceis supplied to the processing zone of the vacuum chamber; and asubstrate pedestal module including a platen made of ceramic materialhaving an upper surface configured to support a semiconductor substratethereon during processing; a stem made of ceramic material having anupper stem flange that supports the platen; and at least one backsidegas tube made of metallized ceramic material that is located in aninterior of the stem, the backside gas tube configured to supplybackside gas to the upper surface of the platen and supply power to anelectrode embedded in the platen.

According to an embodiment, the electrode is an electrostatic clampingelectrode, an RF electrode or combination thereof. The platen caninclude one or more resistance heaters embedded therein wherein theheaters are electrically connected to metal feed rods or metallizedceramic feed rods located inside the stem. The substrate pedestal modulecan further include a thermocouple configured to measure temperature ofthe platen wherein the thermocouple is located inside a ceramic tubeattached to an underside of the platen at a location inside the stem.Preferably, the backside gas tube, the platen and the stem are formed ofthe same ceramic material such as aluminum nitride and/or the backsidegas tube is centrally located in the interior of the stem. In anexemplary embodiment, the platen includes an outer RF electrode embeddedtherein and inner electrostatic clamping (ESC) electrodes embeddedtherein, the inner ESC electrodes coplanar with the outer RF electrode,the outer RF electrode including a radially extending feed stripelectrically connected to a metallized ceramic tube inside the stem, andthe inner ESC electrodes electrically connected to a pair of metallizedceramic feed rods or metallized ceramic feed tubes inside the stem. Inanother embodiment, the metallized ceramic tube is connected to theelectrode by a stress relief connection, the stress relief connectionconfigured to change shape to accommodate differential thermal expansionbetween the metallized ceramic tube and the electrode. The metallizedceramic tube can have a length greater than a length of the stem and/orinclude an electrically conductive coating on an outer surface thereof.

In an exemplary embodiment, the at least one backside gas tube comprisesfirst, second and third metallized ceramic tubes and the platen includesfirst, second and third coplanar electrodes wherein the first electrodeis an outer ring-shaped electrode having a diagonally extending feedstrip electrically connected to the first metalized ceramic tube and thesecond and third electrodes are inner D-shaped electrodes electricallyconnected to the second and third metallized ceramic tubes. The firstmetallized ceramic tube can be in fluid communication with a first gaspassage extending though the diagonally extending feed strip and a firstoutlet at a center of an upper surface of the platen. The secondmetallized ceramic tube can be in fluid communication with a second gaspassage extending through the second electrode and a second outlet inthe upper surface of the platen at a first distance from the firstoutlet. The third metallized ceramic tube can be in fluid communicationwith a third gas passage extending through the third electrode and athird outlet in the upper surface of the platen at a second distancefrom the first outlet, wherein the first and second distances are nogreater than about 1 inch.

Also disclosed herein is a semiconductor substrate support module usefulfor processing semiconductor substrates in a vacuum chamber including aprocessing zone in which a semiconductor substrate may be processed. Thesubstrate support module comprises a platen made of ceramic materialhaving an upper surface configured to support a semiconductor substratethereon during processing; a stem made of ceramic material having anupper stem flange that supports the platen; and a backside gas tube madeof metallized ceramic material that is located in an interior of thestem, the backside gas tube configured to supply backside gas to theupper surface of the platen and supply power to an electrode embedded inthe platen.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

FIG. 1 illustrates a schematic diagram showing an overview of a chemicaldeposition apparatus in accordance with embodiments disclosed herein.

FIG. 2 shows a cross section of a substrate pedestal module inaccordance with an embodiment as disclosed herein.

FIG. 3 illustrates a bottom view of the substrate pedestal module shownin FIG. 2.

FIG. 4 is a cross-sectional perspective view of the substrate supportmodule shown in FIG. 2.

FIG. 5 is a top perspective view of the substrate support module shownin FIG. 2.

FIG. 6 is a bottom perspective view of the substrate support moduleshown in FIG. 2.

FIG. 7 is a cross-sectional view of a substrate support module having asingle metallized ceramic tube inside the stem.

FIG. 8 is a cross-sectional view of a substrate support module having ametallized ceramic tube connected to an embedded RF electrode and twofeed rods connected to two resistance heaters embedded in the pedestalat a location below the RF electrode.

FIG. 9 is a top view of a substrate support in accordance with anembodiment wherein an outer ring-shaped electrode includes a diagonalfeed strip which is supplied power by a central metallize ceramic tubewhich delivers inert gas through a passage in the feed strip.

DETAILED DESCRIPTION

In the following detailed description, numerous specific embodiments areset forth in order to provide a thorough understanding of the apparatusand methods disclosed herein. However, as will be apparent to thoseskilled in the art, the present embodiments may be practiced withoutthese specific details or by using alternate elements or processes. Inother instances, well-known processes, procedures, and/or componentshave not been described in detail so as not to unnecessarily obscureaspects of embodiments disclosed herein. As used herein the term “about”refers to ±10%.

As indicated, present embodiments provide apparatus and associatedmethods for processing a semiconductor substrate in a semiconductorsubstrate processing apparatus such as a chemical vapor depositionapparatus or a plasma-enhanced chemical vapor deposition apparatus. Theapparatus and methods are particularly applicable for use in conjunctionwith high temperature processing of semiconductor substrates such as ahigh temperature deposition processes wherein a semiconductor substratebeing processed is heated to temperatures greater than about 550° C.,such as about 550° C. to about 650° C. or more.

Embodiments disclosed herein are preferably implemented in aplasma-enhanced chemical deposition apparatus (i.e. PECVD apparatus,PEALD apparatus, or PEPDL apparatus), however, they are not so limited.

FIG. 1 provides a simple block diagram depicting various semiconductorsubstrate plasma processing apparatus components arranged forimplementing embodiments as disclosed herein. As shown, a semiconductorsubstrate plasma processing apparatus 100 includes a vacuum chamber 102that serves to contain plasma in a processing zone, which is generatedby a capacitor type system including a showerhead module 104 having anupper RF electrode (not shown) therein working in conjunction with asubstrate pedestal module 106 having a lower RF electrode (not shown)therein. At least one RF generator is operable to supply RF energy intoa processing zone above an upper surface of a semiconductor substrate108 in the vacuum chamber 102 to energize process gas supplied into theprocessing zone of the vacuum chamber 102 into plasma such that a plasmadeposition process may be performed in the vacuum chamber 102. Forexample, a high-frequency RF generator 110 and a low-frequency RFgenerator 112 may each be connected to a matching network 114, which isconnected to the upper RF electrode of the showerhead module 104 suchthat RF energy may be supplied to the processing zone above thesemiconductor substrate 108 in the vacuum chamber 102.

The power and frequency of RF energy supplied by matching network 114 tothe interior of the vacuum chamber 102 is sufficient to generate plasmafrom the process gas. In an embodiment both the high-frequency RFgenerator 110 and the low-frequency RF generator 112 are used, and in analternate embodiment, just the high-frequency RF generator 110 is used.In a process, the high-frequency RF generator 110 may be operated atfrequencies of about 2-100 MHz; in a preferred embodiment at 13.56 MHzor 27 MHz. The low-frequency RF generator 112 may be operated at about50 kHz to 2 MHz; in a preferred embodiment at about 350 to 600 kHz. Theprocess parameters may be scaled based on the chamber volume, substratesize, and other factors. Similarly, the flow rates of process gas, maydepend on the free volume of the vacuum chamber or processing zone.

An upper surface of the substrate pedestal module 106 supports asemiconductor substrate 108 during processing within the vacuum chamber102. The substrate pedestal module 106 can include a chuck to hold thesemiconductor substrate and/or lift pins to raise and lower thesemiconductor substrate before, during and/or after the depositionand/or plasma treatment processes. In an alternate embodiment, thesubstrate pedestal module 106 can include a carrier ring to raise andlower the semiconductor substrate before, during and/or after thedeposition and/or plasma treatment processes. The chuck may be anelectrostatic chuck, a mechanical chuck, or various other types of chuckas are available for use in the industry and/or research. Details of alift pin assembly for a substrate pedestal module including anelectrostatic chuck can be found in commonly-assigned U.S. Pat. No.8,840,754, which is incorporated herein by reference in its entirety.Details of a carrier ring for a substrate pedestal module can be foundin commonly-assigned U.S. Pat. No. 6,860,965, which is incorporatedherein by reference in its entirety. A backside gas supply 116 isoperable to supply a heat transfer gas or purge gas through thesubstrate pedestal module 106 to a region below a lower surface of thesemiconductor substrate during processing. The substrate pedestal module106 includes the lower RF electrode therein wherein the lower RFelectrode is preferably grounded during processing, however in analternate embodiment, the lower RF electrode may be supplied with RFenergy during processing.

To process a semiconductor substrate in the vacuum chamber 102 of thesemiconductor substrate plasma processing apparatus 100, process gasesare introduced from a process gas source 118 into the vacuum chamber 102via inlet 120 and showerhead module 104 wherein the process gas isformed into plasma with RF energy such that a film may be deposited ontothe upper surface of the semiconductor substrate. In an embodiment,multiple source gas lines 122 may be connected to a heated manifold 124.The gases may be premixed or supplied separately to the chamber.Appropriate valving and mass flow control mechanisms are employed toensure that the correct gases are delivered through the showerheadmodule 104 during semiconductor substrate processing. During theprocessing, a backside heat transfer gas or purge gas is supplied to aregion below a lower surface of the semiconductor substrate supported onthe substrate pedestal module 102. Preferably, the processing is atleast one of chemical vapor deposition processing, plasma-enhancedchemical vapor deposition processing, atomic layer depositionprocessing, plasma-enhanced atomic layer deposition processing, pulseddeposition layer processing, or plasma-enhanced pulsed deposition layerprocessing.

In certain embodiments, a system controller 126 is employed to controlprocess conditions during deposition, post deposition treatments, and/orother process operations. The controller 126 will typically include oneor more memory devices and one or more processors. The processor mayinclude a CPU or computer, analog and/or digital input/outputconnections, stepper motor controller boards, etc.

In certain embodiments, the controller 126 controls all of theactivities of the apparatus. The system controller 126 executes systemcontrol software including sets of instructions for controlling thetiming of the processing operations, frequency and power of operationsof the low-frequency RF generator 112 and the high-frequency RFgenerator 110, flow rates and temperatures of precursors and inert gasesand their relative mixing, temperature of a semiconductor substrate 108supported on an upper surface of the substrate pedestal module 106 and aplasma exposed surface of the showerhead module 104, pressure of thevacuum chamber 102, and other parameters of a particular process. Othercomputer programs stored on memory devices associated with thecontroller may be employed in some embodiments.

Disclosed herein is a ceramic pedestal for sequential processing ofindividual semiconductor wafers wherein one or more metallized ceramictubes (AlN, Al₂O₃ , Si₃N₄, ZrO₂, SiC or other ceramic materials may beappropriate) serve as both an electrical connection for RF or heater(AC) power, and to supply backside gases into the wafer chuck cavity.Current practice is that RF power & heater (AC) power connections arerods which are solid metallic materials, connected to the pedestal via atubular stem that mechanically supports the pedestal and isolateselectrical connections from the process chamber. See, for example,commonly-assigned U.S. Patent Publication Nos. 2016/0340781;2016/0336213; and 2016/0333475, each of which is hereby incorporated byreference in its entirety. Current technology uses solid Ni rods for RF& Heater (AC) power without the backside gas option because of spaceconstraints in the shaft prevent the addition of a gas line. That is,space in the stem area is constrained, such that it is difficult to fitadditional features (rods/tubes) for new purposes such as backside gasdelivery to the wafer cooling/edge purge gases. Therefore using one partfor two purposes allows new functionality to be added to the pedestalwith minimal change to form factor.

In accordance with an embodiment, a metallized ceramic tube serves dualtwo purposes of (a) RF or AC power delivery and (B) bringing backsidegases into chamber. A preferred embodiment of the tube is a ceramicmaterial approximately matching the CTE of the pedestal itself, whichcan be accomplished by choosing a material of similar composition (e.g.for an AlN pedestal, choose an AlN tube; for a SiC pedestal, choose aSiC tube), or by using a phase mixture of materials including at leastone phase with greater CTE than the pedestal and at least one phase withlesser CTE than the pedestal, in proportions that allow the volumetricaverage of CTE to approximately match the pedestal material. Analternative embodiment is to have a stress relief connection betweenpedestal and tube, capable of changing shape to accommodate CTE mismatchwithout breakage or other degradation, such as a metal or alloy whosecreep temperature is less than the service temperature of the part, or asolder seal arranged such that surface tension is sufficient to maintaina seal and to prevent migration of liquid during operation.

In a preferred embodiment, the metallization is of a pure, nonmagneticmetal with low electrical resistivity and resistance to oxidation atservice temperature, such as gold. Alternative embodiments includeferromagnetic metals which otherwise meet the above criteria, such asnickel (Ni); nonmetallic substances with low electrical conductivity,such as graphite (C) or titanium nitride (TiN); metals with conductiveoxides, such as silver (Ag); alloys low electrical resistivity, such asaluminum bronze or dispersion-strengthened silver; multi-layerstructures where the functions of oxidation resistance and electricalconduction are accomplished by different layers of material, such asTiN-coated copper; or structures where any metallization is protectedfrom oxidation by a flow of oxygen-free gas, e.g. if the interiorportion of the tube is metallized with Cu and the system is interlockedto prevent pedestal heating without gas flow.

Gases can be transported to the back of the wafer cavity via metallizedceramic tubular holes and metalized top surface to conduct RF or ACpower delivery. This structure can also reduce thermal conductance fromthe hot zone of the pedestal as compared to solid metal conductors,improving thermal uniformity of the wafer, reducing risk of overheatingcomponents adjacent to the pedestal, and reducing heater powerconsumption.

FIG. 2 illustrates a substrate support module 300 which includes aceramic platen 302 having electrically conductive electrodes 305 a, 305b such as an electrically conductive grids and feed strip electrode 304a which is electrically connected to an outer ring-shaped electrode (notshown) embedded therein and a hollow ceramic support stem 306. Theplaten 302 and stem 306 are preferably made of a ceramic material suchas aluminum nitride and a bottom surface 302 a of the platen 302 isjoined to an upper end 306 a of the stem 306 such as by brazing,friction welding, diffusion bonding, or other suitable technique. Acentrally located metallized ceramic tube 308 is located inside the stem306 with an upper end 308 a of the tube 308 electrically connected toembedded feed strip electrode 304 a. An outlet 310 of the tube 308 is influid communication with a gas passage 312 in a support surface 302 b ofthe platen 302. The metallized ceramic tube 308 can be supplied an inertgas such as argon (Ar) or nitrogen (N₂) or a heat transfer gas such ashelium (He) which is delivered via gas passage 312 through outlet 322 toan underside of a semiconductor substrate (not shown) located on supportsurface 302 b. The outer surface of the tube 308 can be sealed to theplaten 302 by a hermetic seal 320. The inside of the stem 306 alsohouses other components such as electrical feed rods 314 which deliverpower to other electrodes such as resistance heaters (not shown) andadditional metallized ceramic tubes 316 which deliver power toelectrostatic clamping electrodes 305 a, 305 b in the platen 302. Themetallized ceramic tubes 316 can also deliver gas through outlets 324,326 to the underside of a wafer supported on the platen 302.

During processing of a semiconductor substrate such as deposition offilms on a silicon wafer supported on the substrate support module 300,the platen 302 may cycle between temperatures ranging from about 20° C.to 500° C. and higher. For processing a 300 mm wafer, the platen 302 canhave a thickness of up to about 1 inch and a diameter of about 15inches, the stem 306 can have a diameter of about 3 inches and thedistance between the bottom of the stem 306 and the upper surface of theplaten 302 can be about 5 inches. The metallized ceramic tube can have adiameter of about 4 mm, a length of about 7 to 8 inches and themetallized coating can have a thickness of about 5 to 50 microns,preferably about 30 microns. The inside of the stem 306 accommodatescomponents such as electrical feeds, at least one gas feed, and at leastone thermocouple. In order to accommodate these components, themetalized ceramic tube 308 can deliver gas to the support surface andsupply power to an embedded electrode thus eliminating the need for aseparate gas feed. Where two or more gas feeds are desired, additionalmetallized ceramic tubes can be used to supply gas and power to embeddedelectrodes in addition, by using lower thermal conductivity ceramictubes such as aluminum nitride tubes rather than high thermalconductivity metal rods such as palladium/rhodium (Pd/Rh) coatedstainless steel or nickel (Ni) rods, it is possible to reduce transferof heat from the platen 302.

FIG. 3 shows a bottom view of the substrate support module 300 whereinseven electrical feeds can be seen. In this embodiment, a centermetallized ceramic tube 308 can supply power to a center electrode, fourfeed rods 314 can supply power to resistance heaters such as an innerresistance heater and an outer resistance heater (not shown), and twometallized ceramic tubes 316 can supply power to two electrodes such astwo electrostatic chucking electrodes (not shown) embedded in the platen302. The metallized ceramic tubes 316 can also deliver gas to theunderside of a substrate supported on the platen 302 and/or supply RFenergy to the electrostatic chucking electrodes.

FIG. 4 is a cut-away view of the substrate support module 300 wherein asingle metallized ceramic tube 308 is located in the center of theplaten 302, four solid feed rods 314 such as nickel (Ni) rods arecircumferentially spaced apart at locations inward of an inner surfaceof the stem 306, and two metallized ceramic tubes 316 are electricallyconnected to electrostatic clamping electrodes 305 a, 305 b. The solidfeed rods 314 can supply power to resistance heaters 318 a, 318 b (seeFIG. 8) embedded in the platen 302 at a location below an outerring-shaped electrode 304 (see FIG. 9) connected to the metallizedceramic tube 308 by feed strip 304 a. Electrical connections between themetallized ceramic tubes 308, 316 and the electrodes 304, 305 a, 305 band between the feed rods 314 and the heaters 318 a, 318 b can includesolid terminals/studs/sockets as disclosed in commonly-assigned U.S.Pat. No. 9,088,085, the disclosure of which is hereby incorporated byreference. During manufacture of the substrate support module 300, themetallized ceramic tubes 308, 316 can be bonded to the platen 302 andelectrodes 304, 305 a, 305 b via suitable sintering and/or brazingtechniques.

FIG. 5 is a top perspective view of the platen 302 prior to attachmentof stem 306. However, stem 306 is preferably bonded to the platen 302 byhigh temperature brazing or diffusion bonding prior to attachment of thefeed rods 314 and ceramic tube(s) 308/316. As shown, feed rods 314extend from a lower surface of the platen and preferably the feed rods314 and metallized ceramic tube(s) 308/316 extend a distance greaterthan the length of the stem 306. For example, the feed rods 314 andmetallized ceramic tube(s) 308/316 can extend a distance of at leastabout 7 to 8 inches, e.g., about 7.25 inches from the lower surface 302a of the platen 302.

FIG. 6 shows a bottom perspective view of the substrate support module300. As shown, metallized ceramic tube 308, feed rods 314 and metallizedceramic tubes 316 extend outward from a lower end of the stem 306.

FIG. 7 is a cross-sectional view of the substrate support module 300. Asshown, in this embodiment, the platen 302 includes a central feed stripelectrode 304 a electrically connected to the metallized ceramic tube308 and connections to electrostatic electrodes 305 a, 305 b are notvisible.

FIG. 8 is a cross-sectional view of the substrate support module 300. Ashown, the metallized ceramic tube 308 is electrically connected to feedstrip electrode 304 a and two feed rods 314 are electrically connectedto one or more resistance heaters 318 a, 318 b embedded in the platen302 at a location below the electrode 304. For instance, a pair of feedrods 314 can be connected to an inner heater and another pair of feedrods 314 can be connected to an outer heater. If desired a single heateror more than two heaters can be embedded in the platen 302 in anydesired geometrical arrangement.

FIG. 9 is a top view of a substrate support in accordance with anembodiment wherein the platen 302 includes three coplanar electrodes andthree metallized ceramic tubes which supply power to the electrodes. Inthis embodiment, the platen 302 includes first, second and thirdcoplanar electrodes 304/305 a/305 b wherein the first electrode is anouter ring-shaped electrode 304 having a diagonally extending feed strip304 a electrically connected to the first metalized ceramic tube 308(see FIG. 2) and the second and third electrodes are inner D-shapedelectrodes 305 a/305 b electrically connected to the second and thirdmetallized ceramic tubes 316 a/316 b (see FIG. 3). The first metallizedceramic tube 308 is in fluid communication with the first gas passage312 extending though the diagonally extending feed strip 304 a and afirst outlet 322 at a center of the upper surface 302 b of the platen302. The second metallized ceramic tube 316 a is in fluid communicationwith a second gas passage extending through the second electrode 305 aand a second outlet 324 in the upper surface of the platen 302 at afirst distance from the first outlet 322. The third metallized ceramictube 316 b is in fluid communication with a third gas passage extendingthrough the third electrode 305 b and a third outlet 326 in the uppersurface of the platen 302 at a second distance from the first outlet322. The first and second distances are preferably no greater than about1 inch, more preferably the second and third outlets 324/326 are spacedabout 0.75 inch from the first outlet 322. The platen 302 also includesthree lift pin holes 328 through which lift pins can raise and lower awafer onto the platen 302.

The metallized ceramic tubes 308/316 and feed rods 314 can be used tosupply radio-frequency (RF), direct current (DC) and/or alternatingcurrent (AC) to electrodes embedded in the platen 302. Additionally, athermocouple or other sensor can be housed in a metallized ceramic tubewhich also supplies power to an electrode embedded in the platen 302.The platen 302 is preferably a unitary body of sintered ceramic materialsuch as aluminum oxide (alumina), yttria, aluminum nitride, boronnitride, silicon oxide, silicon carbide, silicon nitride, titaniumoxide, zirconium oxide, or other suitable material or combination ofmaterials. Each electrode can have a planar or non-planar configurationand is preferably made of an electrically conductive metallic material(e.g., tungsten, molybdenum, tantalum, niobium, cobalt) or electricallyconductive non-metallic material (e.g., aluminum oxide-tantalum carbide,aluminum oxide-silicon carbide, aluminum nitride-tungsten, aluminumnitride-tantalum, yttrium oxide-molybdenum). The electrodes can beformed from powder materials which are co-fired with the ceramicmaterial of the pedestal. For example, the electrodes can be formed ofconductive paste which is co-fired with layers of the ceramic materialforming the body of the pedestal. For example, the paste can includeconductive metal powder of nickel (Ni), tungsten (W), molybdenum (Mo),titanium (Ti), manganese (Mn), copper (Cu), silver (Ag), palladium (Pd),platinum (Pt), rhodium (Rh), Alternatively, the electrodes can be formedfrom a deposited material having a desired electrode pattern or adeposited film which is etched to form a desired electrode pattern.Still yet, the electrodes can comprise preformed grids, plates, wiremesh, or other suitable electrode material and/or configuration. In anembodiment, the electrodes include at least one electrostatic clampingelectrode which is powered by a DC power source to provide DC chuckingvoltage (e.g., about 200 to about 2000 volts), at least one RF electrodepowered by a RF power source to provide RF bias voltage (e.g., one ormore frequencies of about 400 KHz to about 60 MHz at power levels ofabout 50 to about 3000 watts) and/or at least one electrode powered byDC and RF power sources via suitable circuitry. The metallized ceramictube can have a conductive metallized coating on its inner surface,outer surface or inner and outer surfaces. To connect the conductivemetallized coating to an embedded electrode, the conductive metallizedcoating can be mechanically or metallurgically joined directly to theelectrode or a terminal thereof located at an underside of the pedestal.For example, the conductive metallized coating can be brazed to aterminal attached to the embedded electrode.

While the substrate pedestal module of the semiconductor substrateprocessing apparatus has been described in detail with reference tospecific embodiments thereof, it will be apparent to those skilled inthe art that various changes and modifications can be made, andequivalents employed, without departing from the scope of the appendedclaims.

What is claimed is:
 1. A module useful for processing semiconductorsubstrates in a vacuum chamber including a processing zone in which asemiconductor substrate may be processed, the module comprising: aceramic body; a stem made of ceramic material having a flange bonded tothe ceramic body; and at least one metallized ceramic tube configured tosupply gas to the ceramic body and supply power to an electrode embeddedin the ceramic body.
 2. The module of claim 1, wherein the electrode isan electrostatic clamping electrode.
 3. The module of claim 1, whereinthe electrode is an RF electrode.
 4. The module of claim 1, wherein theceramic body includes one or more resistance heaters embedded thereinand the heaters are electrically connected to metallized ceramic feedrods or metal feed rods.
 5. The module of claim 1, further comprising athermocouple configured to measure temperature of the ceramic body, thethermocouple located inside a ceramic tube attached to the ceramic body.6. The module of claim 1, wherein the metalized ceramic tube, theceramic body and the stem are formed of aluminum nitride.
 7. The moduleof claim 1, wherein the metalized ceramic tube is centrally located inthe interior of the stem.
 8. The module of claim 1, wherein the ceramicbody includes an outer electrode embedded therein and inner electrodesembedded therein, the inner electrodes coplanar with the outerelectrode, the outer electrode electrically connected to a metallizedceramic power feed rod inside the stem, and each of the inner electrodeselectrically connected to a pair of metallized ceramic feed rods insidethe stem.
 9. The module of claim 1, wherein the metallized ceramic tubeis connected to the electrode by a stress relief connection, the stressrelief connection configured to change shape to accommodate differentialthermal expansion between the metallized ceramic tube and the electrode.10. The module of claim 1, wherein the metallized ceramic tube has alength greater than a length of the stem and the metallized ceramic tubeincludes an electrically conductive coating only on an outer surfacethereof.
 11. The module of claim 1, wherein the at least one metalizedceramic tube comprises first, second and third metallized ceramic tubesand the ceramic body includes first, second and third coplanarelectrodes wherein the first electrode is an outer ring-shaped electrodehaving a diagonally extending feed strip electrically connected to thefirst metalized ceramic tube and the second and third electrodes areinner D-shaped electrodes electrically connected to the second and thirdmetallized ceramic tubes.